Ion-implantation and analysis for doped silicon slot waveguides

Author

Deam, L. ; Stavrias, N. ; Lee, Kin Keung ; McCallum, J.C.

Author_Institution

Sch. of Phys., Univ. of Melbourne, Melbourne, VIC, Australia

fYear

2012

fDate

12-14 Dec. 2012

Firstpage

77

Lastpage

78

Abstract

Ion implantation is being used to fabricate silicon-nanocrystal (Si-nc) erbium-doped slot waveguide structures. Photoluminescence (PL) measurements are used to investigate the luminescent and erbium sensitisation properties while Rutherford backscattering spectrometry (RBS) is used to provide structural information. This study is a preliminary step toward development of active elements for silicon optical interconnects.

Keywords

Rutherford backscattering; elemental semiconductors; erbium; ion implantation; nanostructured materials; optical waveguides; photoluminescence; silicon; Rutherford backscattering spectrometry; Si:Er; doped silicon slot waveguides; erbium sensitisation properties; ion-implantation; luminescent properties; photoluminescence measurements; silicon optical interconnects; silicon-nanocrystal erbium-doped slot waveguide structures; Erbium; Ion implantation; Optical device fabrication; Optical waveguides; Photonics; Silicon; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on

Conference_Location

Melbourne, VIC

ISSN

1097-2137

Print_ISBN

978-1-4673-3047-3

Type

conf

DOI

10.1109/COMMAD.2012.6472368

Filename

6472368