• DocumentCode
    599860
  • Title

    Raman study on the phase transformations of the meta-stable phases of Si induced by indentation

  • Author

    Johnson, Brett C. ; Stavrias, N. ; Haberl, B. ; Aji, L.B.B. ; Bradby, J.E. ; McCallum, J.C. ; Williams, James S.

  • Author_Institution
    Sch. of Phys., Univ. of Melbourne, Melbourne, VIC, Australia
  • fYear
    2012
  • fDate
    12-14 Dec. 2012
  • Firstpage
    89
  • Lastpage
    90
  • Abstract
    Raman scattering is used to investigate the metastable Si phases formed by indentation. The indent strain, phase distribution and the kinetics of the phase transformations are examined.
  • Keywords
    Raman spectra; elemental semiconductors; indentation; silicon; solid-state phase transformations; Raman scattering; Si; indent strain; indentation; metastable phase; phase distribution; phase transformations; Annealing; Educational institutions; Measurement by laser beam; Phase measurement; Raman scattering; Silicon; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
  • Conference_Location
    Melbourne, VIC
  • ISSN
    1097-2137
  • Print_ISBN
    978-1-4673-3047-3
  • Type

    conf

  • DOI
    10.1109/COMMAD.2012.6472374
  • Filename
    6472374
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=599860