DocumentCode
599881
Title
Non-linear direct-laser-write lithography for semiconductor nanowire characterisation
Author
Parkinson, P. ; Peng, K. ; Jiang, N. ; Gao, Q. ; Tan, H.H. ; Jagadish, C.
Author_Institution
Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear
2012
fDate
12-14 Dec. 2012
Firstpage
135
Lastpage
136
Abstract
A non-linear photolithography technique is presented, providing a new, rapid and damage-free method of contacting semiconductor nanowires. In addition, by using nanowires with room-temperature luminescence, a through-resist photoluminescence step provides a verifiable route to contacting high-quality wires [1].
Keywords
nanowires; photolithography; photoluminescence; damage-free method; high-quality wire; nonlinear direct-laser-write lithography; nonlinear photolithography; room-temperature luminescence; semiconductor nanowire; through-resist photoluminescence; Contacts; Gallium arsenide; Lithography; Photoluminescence; Resists; Substrates; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location
Melbourne, VIC
ISSN
1097-2137
Print_ISBN
978-1-4673-3047-3
Type
conf
DOI
10.1109/COMMAD.2012.6472397
Filename
6472397
Link To Document