• DocumentCode
    599888
  • Title

    A numerical model for determining the relative accuracy of the Landé g-factor obtained from ac and dc conductance measurements of Quantum Point Contacts

  • Author

    Fricke, S. ; Burke, A.M. ; Micolich, A.P.

  • Author_Institution
    Sch. of Phys., Univ. of New South Wales, Sydney, NSW, Australia
  • fYear
    2012
  • fDate
    12-14 Dec. 2012
  • Firstpage
    149
  • Lastpage
    150
  • Abstract
    A number of approaches currently exist for obtaining the Landé effective g-factor g* from experimental measurements of the ac and dc conductance of AlGaAs/GaAs Quantum Point Contacts (QPCs). The correspondence between these methods is not perfect, motivating us to develop an analytical model for assessing the relative accuracy of the various approaches using a perfect, experimental artefact-free data-set. We will present a comparative study of the accuracy of ac and dc-based methods for determining the g-factor in QPCs.
  • Keywords
    III-V semiconductors; aluminium compounds; electric admittance measurement; g-factor; gallium arsenide; quantum point contacts; AC conductance measurement; AlGaAs-GaAs; DC conductance measurement; Lande effective g-factor; Lande g-factor; quantum point contact; relative accuracy; Accuracy; Analytical models; Data models; Logic gates; Magnetic field measurement; Physics; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
  • Conference_Location
    Melbourne, VIC
  • ISSN
    1097-2137
  • Print_ISBN
    978-1-4673-3047-3
  • Type

    conf

  • DOI
    10.1109/COMMAD.2012.6472404
  • Filename
    6472404