DocumentCode
599888
Title
A numerical model for determining the relative accuracy of the Landé g-factor obtained from ac and dc conductance measurements of Quantum Point Contacts
Author
Fricke, S. ; Burke, A.M. ; Micolich, A.P.
Author_Institution
Sch. of Phys., Univ. of New South Wales, Sydney, NSW, Australia
fYear
2012
fDate
12-14 Dec. 2012
Firstpage
149
Lastpage
150
Abstract
A number of approaches currently exist for obtaining the Landé effective g-factor g* from experimental measurements of the ac and dc conductance of AlGaAs/GaAs Quantum Point Contacts (QPCs). The correspondence between these methods is not perfect, motivating us to develop an analytical model for assessing the relative accuracy of the various approaches using a perfect, experimental artefact-free data-set. We will present a comparative study of the accuracy of ac and dc-based methods for determining the g-factor in QPCs.
Keywords
III-V semiconductors; aluminium compounds; electric admittance measurement; g-factor; gallium arsenide; quantum point contacts; AC conductance measurement; AlGaAs-GaAs; DC conductance measurement; Lande effective g-factor; Lande g-factor; quantum point contact; relative accuracy; Accuracy; Analytical models; Data models; Logic gates; Magnetic field measurement; Physics; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location
Melbourne, VIC
ISSN
1097-2137
Print_ISBN
978-1-4673-3047-3
Type
conf
DOI
10.1109/COMMAD.2012.6472404
Filename
6472404
Link To Document