DocumentCode
599895
Title
Optimisation studies for AlGaN/GaN-based nitrate sensors
Author
Khir, F.L.M. ; Myers, M. ; Podolska, A. ; Baker, M.V. ; Nener, B.D. ; Parish, G.
Author_Institution
Sch. of Electr., Electron. & Comput. Eng., Univ. of Western Australia, Crawley, WA, Australia
fYear
2012
fDate
12-14 Dec. 2012
Firstpage
163
Lastpage
164
Abstract
AlGaN/GaN HEMT (high electron mobility transistor) sensors have been coated with a nitrate selective polymer membrane enabling nitrate ion sensing in water. In this study we optimise the thickness of the nitrate selective membrane to maximise sensor performance (sensitivity).
Keywords
aluminium compounds; chemical sensors; gallium compounds; high electron mobility transistors; membranes; optimisation; polymers; AlGaN-GaN; HEMT sensor; high electron mobility transistor; nitrate ion sensor; nitrate selective polymer membrane; optimisation; water; Aluminum gallium nitride; Australia; Biomembranes; Chemical sensors; Gallium nitride; HEMTs; Sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location
Melbourne, VIC
ISSN
1097-2137
Print_ISBN
978-1-4673-3047-3
Type
conf
DOI
10.1109/COMMAD.2012.6472411
Filename
6472411
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