DocumentCode
599896
Title
Effect of FIB milling on MEMS SOI cantilevers
Author
Venkatesh, C. ; Singh, Piyush Pratp ; Renilkumar, M. ; Varma, Manoj ; Bhat, Nagaraj ; Pratap, Rudra ; Martyniuk, M. ; Keating, Ana ; Umama-Membreno, G.A. ; Silva, K. K. M. B. Dilusha ; Dell, J.M. ; Faraone, L.
Author_Institution
Sch. of Electr. Electron. & Comput. Eng., Univ. of Western Australia, Crawley, WA, Australia
fYear
2012
fDate
12-14 Dec. 2012
Firstpage
165
Lastpage
166
Abstract
Stress induced by Focused Ion Beam (FIB) milling of cantilevers fabricated on silicon-on-insulator (SOI) wafer has been studied. Milling induces stress gradients ranging from -10MPa/μm to -120MPa/μm, depending on the location of cantilevers from the point of milling. Simulations were done to estimate the stress in the milled cantilevers.
Keywords
cantilevers; focused ion beam technology; micromechanical devices; silicon-on-insulator; FIB milling; MEMS SOI cantilever; SOI wafer; focused ion beam; silicon-on-insulator; stress gradient; Australia; Micromechanical devices; Milling; Silicon; Silicon on insulator technology; Stress; Structural beams;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location
Melbourne, VIC
ISSN
1097-2137
Print_ISBN
978-1-4673-3047-3
Type
conf
DOI
10.1109/COMMAD.2012.6472412
Filename
6472412
Link To Document