Title :
Effect of FIB milling on MEMS SOI cantilevers
Author :
Venkatesh, C. ; Singh, Piyush Pratp ; Renilkumar, M. ; Varma, Manoj ; Bhat, Nagaraj ; Pratap, Rudra ; Martyniuk, M. ; Keating, Ana ; Umama-Membreno, G.A. ; Silva, K. K. M. B. Dilusha ; Dell, J.M. ; Faraone, L.
Author_Institution :
Sch. of Electr. Electron. & Comput. Eng., Univ. of Western Australia, Crawley, WA, Australia
Abstract :
Stress induced by Focused Ion Beam (FIB) milling of cantilevers fabricated on silicon-on-insulator (SOI) wafer has been studied. Milling induces stress gradients ranging from -10MPa/μm to -120MPa/μm, depending on the location of cantilevers from the point of milling. Simulations were done to estimate the stress in the milled cantilevers.
Keywords :
cantilevers; focused ion beam technology; micromechanical devices; silicon-on-insulator; FIB milling; MEMS SOI cantilever; SOI wafer; focused ion beam; silicon-on-insulator; stress gradient; Australia; Micromechanical devices; Milling; Silicon; Silicon on insulator technology; Stress; Structural beams;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4673-3047-3
DOI :
10.1109/COMMAD.2012.6472412
