• DocumentCode
    599897
  • Title

    Strain relaxation behaviour in germanium-on-insulator fabri-cated by ion implantation

  • Author

    Kim, Tae Hyun ; Belay, Kidane ; Llewellyn, D. ; Elliman, R. ; Choi, Daniel ; Luther-Davies, Barry

  • Author_Institution
    Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
  • fYear
    2012
  • fDate
    12-14 Dec. 2012
  • Firstpage
    167
  • Lastpage
    168
  • Abstract
    Single crystal Ge layers of different thickness were successfully formed on bulk SiO2 by ion implantation and oxidation techniques. Structural and compositional properties of the Ge layers were investigated by high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. The quality of the resulting layers was found to be a function of the layer thickness.
  • Keywords
    Raman spectroscopy; germanium; ion implantation; silicon compounds; stress relaxation; transmission electron microscopy; Ge-SiO2; Raman spectroscopy; germanium-on-insulator; high resolution transmission electron microscopy HRTEM; ion implantation; layer thickness; oxidation technique; strain relaxation; Educational institutions; Oxidation; Silicon; Silicon on insulator technology; Strain; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
  • Conference_Location
    Melbourne, VIC
  • ISSN
    1097-2137
  • Print_ISBN
    978-1-4673-3047-3
  • Type

    conf

  • DOI
    10.1109/COMMAD.2012.6472413
  • Filename
    6472413
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=599897