DocumentCode :
599897
Title :
Strain relaxation behaviour in germanium-on-insulator fabri-cated by ion implantation
Author :
Kim, Tae Hyun ; Belay, Kidane ; Llewellyn, D. ; Elliman, R. ; Choi, Daniel ; Luther-Davies, Barry
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear :
2012
fDate :
12-14 Dec. 2012
Firstpage :
167
Lastpage :
168
Abstract :
Single crystal Ge layers of different thickness were successfully formed on bulk SiO2 by ion implantation and oxidation techniques. Structural and compositional properties of the Ge layers were investigated by high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. The quality of the resulting layers was found to be a function of the layer thickness.
Keywords :
Raman spectroscopy; germanium; ion implantation; silicon compounds; stress relaxation; transmission electron microscopy; Ge-SiO2; Raman spectroscopy; germanium-on-insulator; high resolution transmission electron microscopy HRTEM; ion implantation; layer thickness; oxidation technique; strain relaxation; Educational institutions; Oxidation; Silicon; Silicon on insulator technology; Strain; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
ISSN :
1097-2137
Print_ISBN :
978-1-4673-3047-3
Type :
conf
DOI :
10.1109/COMMAD.2012.6472413
Filename :
6472413
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=599897
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