Fabrication and investigation of Nitrogen doped ultra-nano-crystalline diamond Hall-bar devices

Author

Eikenberg, N. ; Ganesan, Kavita ; Lee, Kin Keung ; Edmonds, Michael J.S. ; Willems van Beveren, L.H. ; Prawer, S.

Author_Institution

Sch. of Phys., Univ. of Melbourne, Melbourne, VIC, Australia

fYear

2012

fDate

12-14 Dec. 2012

Firstpage

171

Lastpage

172

Abstract

Using microwave-assisted plasma chemical vapour deposition (CVD) a layer of Nitrogen doped ultra-nano-crystalline diamond (N-UNCD) is deposited on top of a non-conducting diamond layer, which itself is situated on a Silicon wafer. This structure is then shaped into Hall-bar devices of various dimensions using optical lithography and dry-etching techniques. The devices´ electrical properties are investigated at various temperatures using a cryogen-free dilution refrigerator.

Keywords

Hall effect devices; cryogenic electronics; diamond; etching; nitrogen; photolithography; plasma CVD; silicon; C:N; CVD; N-UNCD; cryogen-free dilution refrigerator; device electrical property; dry-etching technique; fabrication; microwave-assisted plasma chemical vapour deposition; nitrogen doped ultra-nano-crystalline diamond Hall-bar device; nonconducting diamond layer; optical lithography; silicon wafer; temperature; Conductivity; Diamonds; Integrated optics; Nitrogen; Optical device fabrication; Plasma temperature; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on

Conference_Location

Melbourne, VIC

ISSN

1097-2137

Print_ISBN

978-1-4673-3047-3

Type

conf

DOI

10.1109/COMMAD.2012.6472415

Filename

6472415