DocumentCode
599911
Title
Photo-ionisation spectra of single erbium centres by charge sensing with a nano transistor
Author
Yin, C.M. ; Rancic, Milica ; Stavrias, N. ; de Boo, G.G. ; McCallum, J.C. ; Sellars, Matthew J. ; Rogge, S.
Author_Institution
Centre of Excellence for Quantum Comput. & Commun. Technol., Univ. of New South Wales, Sydney, NSW, Australia
fYear
2012
fDate
12-14 Dec. 2012
Firstpage
197
Lastpage
198
Abstract
We show the photo-ionisation of an individual erbium centre in silicon. A single-electron transistor is used as a charge detector to observe the resonant ionization as a function of photon energy. This allows for optical addressing and electrical detection of individual erbium centres with exceptionally narrow line width.
Keywords
elemental semiconductors; erbium; photoionisation; silicon; single electron transistors; charge detector; charge sensing; electrical detection; nanotransistor; photoionisation spectra; photon energy; resonant ionization; silicon; single erbium centre; single-electron transistor; Communications technology; Erbium; Ions; Photonics; Quantum computing; Silicon; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location
Melbourne, VIC
ISSN
1097-2137
Print_ISBN
978-1-4673-3047-3
Type
conf
DOI
10.1109/COMMAD.2012.6472428
Filename
6472428
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