Observation of the Kondo effect in a spin-3/2 hole quantum dot

Author

Klochan, O. ; Micolich, A.P. ; Hamilton, A.R. ; Trunov, K. ; Reuter, D. ; Wieck, A.D.

Author_Institution

Sch. of Phys., Univ. of New South Wales, Sydney, NSW, Australia

fYear

2012

fDate

12-14 Dec. 2012

Firstpage

199

Lastpage

200

Abstract

We report for the first time the observation of the Kondo effect in a spin-3/2 hole quantum dot formed near pinch-off in a GaAs quantum wire. We clearly observe two distinctive hallmarks of quantum dot Kondo physics. First, the zero-bias peak in the differential conductance splits an in-plane magnetic field and the splitting is independent of gate voltage. Second, the splitting rate is twice as large as that for the lowest one-dimensional subband. We show that the Zeeman splitting of the zero-bias peak is highly anisotropic and attribute this to the strong spinorbit interaction for holes in GaAs.

Keywords

III-V semiconductors; Kondo effect; Zeeman effect; gallium arsenide; semiconductor quantum dots; semiconductor quantum wires; spin-orbit interactions; GaAs; GaAs quantum wire pinch off; Kondo effect observation; Zeeman splitting; differential conductance; in plane magnetic field; quantum dot Kondo physics; spin-3/2 hole quantum dot; spin-orbit interaction; splitting rate; zero bias peak; Gallium arsenide; Logic gates; Magnetic fields; Metals; Physics; Quantum dots; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on

Conference_Location

Melbourne, VIC

ISSN

1097-2137

Print_ISBN

978-1-4673-3047-3

Type

conf

DOI

10.1109/COMMAD.2012.6472429

Filename

6472429