• DocumentCode
    599921
  • Title

    Fabrication of single photon centres in silicon carbide

  • Author

    Johnson, Brett C. ; Castelletto, S. ; Ohshima, T. ; Umeda, Tomohiro

  • Author_Institution
    Radiat. Effects Group, Japan Atomic Energy Agency, Takasaki, Japan
  • fYear
    2012
  • fDate
    12-14 Dec. 2012
  • Firstpage
    217
  • Lastpage
    218
  • Abstract
    Bright room temperature single photon emission from isolated defects in bulk 4H silicon carbide (SiC) is reported. The photo-physical properties of the defect, having emission around 700 nm is presented.
  • Keywords
    colour centres; photons; silicon compounds; SiC; bright room temperature single photon emission; bulk silicon carbide; isolated defects; photo-physical property; single photon centre fabrication; Carbon dioxide; Diamonds; Educational institutions; Photonics; Physics; Silicon carbide; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
  • Conference_Location
    Melbourne, VIC
  • ISSN
    1097-2137
  • Print_ISBN
    978-1-4673-3047-3
  • Type

    conf

  • DOI
    10.1109/COMMAD.2012.6472438
  • Filename
    6472438
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=599921