Title :
Different responses between undoped and N-doped few-layer graphene based photonic devices
Author :
Wenrong Wang ; Tie Li ; Yuxiu Zhou ; Chen Liang ; Yuelin Wang
Author_Institution :
State Key Labs. of Transducer Technol., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
fDate :
Aug. 29 2012-Sept. 1 2012
Abstract :
In this paper, undoped and N-doped few-layer graphene (FLG) films were synthesized by ambient pressure chemical vapor deposition. The different photoresponse between these two kinds of FLG based photonic devices was discussed. Photoconductive and photovoltaic responses were found respectively in undoped and N-doped FLG based photonic devices. Under IR lamp illumination in vacuum, the resistance changed in undoped FLG based device while photocurrent at zero voltage bias was found in N-doped FLG based device. The photoconductive effect was enhanced as the temperature decreased, on the contrary, the photocurrent was found to decrease as the temperature decreased from room temperature to 78K.
Keywords :
chemical vapour deposition; graphene; lamps; lighting; optical films; photonic band gap; IR lamp illumination; chemical vapor deposition; few-layer graphene films; photoconductive effect; photoconductive responses; photonic devices; photovoltaic responses; temperature 293 K to 298 K; temperature 78 K; Films; Graphene; Lighting; Photoconductivity; Photonics; Photovoltaic systems; CVD; graphene; photoconductive; photovoltaic;
Conference_Titel :
Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 2012 International Conference on
Conference_Location :
Shaanxi
Print_ISBN :
978-1-4673-4588-0
Electronic_ISBN :
978-1-4673-4589-7
DOI :
10.1109/3M-NANO.2012.6472949