Very high-speed GaN-based cyan light emitting diode on patterned sapphire substrate for 1 Gbps plastic optical fiber communication

Author

Shi, Jin-Wei ; Che-Wei Lin ; Wei Chen ; Bowers, John E. ; Sheu, J.-K. ; Ching-Liang Lin ; Yun-Li Li ; Vinogradov, J. ; Ziemann, O.

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Taoyuan, Taiwan

fYear

2012

fDate

4-8 March 2012

Firstpage

1

Lastpage

3

Abstract

We demonstrate novel cyan light-emitting-diodes (LEDs) on patterned-sapphire substrate with record-high electrical-to-optical bandwidth (0.38 GHz) among visible LEDs. 0.93Gbps error-free transmission in plastic-optical-fiber can be achieved by using such device under only 20mA bias current.

Keywords

III-V semiconductors; gallium compounds; integrated optoelectronics; light emitting diodes; optical communication equipment; optical fibre communication; optical polymers; plastics; wide band gap semiconductors; Al₂O₃; GaN-Al₂O₃; bandwidth 0.38 GHz; bias current; bit rate 0.93 Gbit/s; bit rate 1 Gbit/s; current 20 mA; electrical-to-optical bandwidth; error-free transmission; patterned sapphire substrate; plastic optical fiber communication; very high-speed cyan light emitting diode; visible LED; Bandwidth; Current measurement; Gallium nitride; Light emitting diodes; Optical fibers; Substrates; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication Conference and Exposition (OFC/NFOEC), 2012 and the National Fiber Optic Engineers Conference

Conference_Location

Los Angeles, CA

ISSN

pending

Print_ISBN

978-1-4673-0262-3

Type

conf

Filename

6476135