Title :
A 2.535 GHz fully integrated Doherty power amplifier in CMOS 65nm with constant PAE in backoff
Author :
Carneiro, Marcos L. ; Deltimple, Nathalie ; Belot, Didier ; de Carvalho, P.H.P. ; Kerherve, Eric
Author_Institution :
IMS Lab., Univ. de Bordeaux, Talence, France
fDate :
Feb. 27 2013-March 1 2013
Abstract :
A fully integrated Doherty power amplifier at 2.535 GHz is presented in 65 nm CMOS technology with constant PAE over a 8.75dB backoff. The amplifier has 23.4 dBm output power and both PAE peaks have the same level in 25%. Both sub-amplifiers have a single-ended cascode topology and optimized input and output networks to reduce losses and correctly balance their behavior.
Keywords :
CMOS analogue integrated circuits; UHF power amplifiers; CMOS technology; Constant PAE; efficiency 25 percent; frequency 2.535 GHz; fully integrated Doherty power amplifier; optimized input; output networks; single-ended cascode topology; size 65 nm; subamplifiers; CMOS integrated circuits; CMOS technology; Gain; Power amplifiers; Power generation; Topology; Transistors;
Conference_Titel :
Circuits and Systems (LASCAS), 2013 IEEE Fourth Latin American Symposium on
Conference_Location :
Cusco
Print_ISBN :
978-1-4673-4897-3
DOI :
10.1109/LASCAS.2013.6519031
