• DocumentCode
    601054
  • Title

    A current-starved inverter-based differential amplifier design for ultra-low power applications

  • Author

    Wilson, William ; Chen, T. ; Selby, R.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Colorado State Univ., Fort Collins, CO, USA
  • fYear
    2013
  • fDate
    Feb. 27 2013-March 1 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    As silicon feature sizes decrease, more complex circui try arrays can now be contrived on a single die. This increase in the number of on-chip devices per unit area results in increased power dissipation per unit area. In order to meet certain power and operating temperature specifications, circuit design necessitates a focus on power efficiency, which is especially important in systems employing hundreds or thousands of instances of the same device. In large arrays, a slight increase in the power efficiency of a single component is heightened by the number of instances of the device in the system. This paper proposes a fully differential, low-power current-starving inverter-based amplifier topology designed in a commercial 0.18μm process. This design achieves 46dB DC gain and a 464 kHz uni ty gain frequency with a power consumption of only 145.32nW at 700mV power supply vol tage for ultra-low power, low bandwidth applications. Higher bandwidth designs are also proposed, including a 48dB DC gain, 2.4 MHz unity-gain frequency amplifier operating at 900mV wi th only 3.74μW power consumption.
  • Keywords
    differential amplifiers; elemental semiconductors; invertors; low-power electronics; silicon; DC gain; circuit design necessitates; complex circuitry arrays; current-starved inverter-based differential amplifier design; frequency 2.4 MHz; frequency 464 kHz; gain 46 dB; low-power current-starving inverter-based amplifier topology; on-chip devices; operating temperature specifications; power 145.32 mW; power 3.74 muW; power consumption; power dissipation; power efficiency; silicon feature sizes; size 0.18 mum; ultralow power applications; unity-gain frequency amplifier; voltage 700 mV; voltage 900 mV; Bandwidth; Impedance; Inverters; Operational amplifiers; Power demand; Topology; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (LASCAS), 2013 IEEE Fourth Latin American Symposium on
  • Conference_Location
    Cusco
  • Print_ISBN
    978-1-4673-4897-3
  • Type

    conf

  • DOI
    10.1109/LASCAS.2013.6519040
  • Filename
    6519040