DC and AC electrical characterization temperature dependence of Ag/Porous Silicon/p-Si/Al

We present DC and AC electrical characterization and temperature dependence of Ag/Porous Silicon/p-Si/Al structures to examine conduction mechanisms. Porous Silicon (PS) layers were manufactured by electrochemical etching in p-type wafer silicon. The dependence of resistance vs. temperature was studied in a range between 240 and 320K for DC electrical analysis. On the other hand, the AC electrical measurements conductance and capacitance were performed from 10¹ to 10⁷ Hz in a range of 0.7 to 1.7 V, at room temperature. For the mathematical model and equivalent circuit, the values and their respective simulations were found with the software of electronic characterization, CEALab^®.