Title :
High Brightness, Narrow Bandwidth DBR Diode Lasers at 1120 nm
Author :
Paschke, Katrin ; Wenzel, Hans ; Fiebig, C. ; Blume, Gunnar ; Bugge, F. ; Fricke, J. ; Erbert, Gotz
Author_Institution :
Leibniz-Inst. fur Hochstfrequenztechnik, Ferdinand-Braun-Inst., Berlin, Germany
Abstract :
In this letter, we report on monolithic distributed Bragg reflector ridge waveguide diode lasers. The lasers feature highly strained InGaAs quantum wells and fifth order surface gratings for a stabilized emission wavelength ~1120 nm. Output powers up to 1 W and a maximum conversion efficiency of ~34% were achieved in a spatial and spectral single-mode. In a preliminary reliability test, at 0.4 W a lifetime of could be demonstrated. Therefore, the laser sources should allow for an efficient non-linear frequency doubling to 560 nm.
Keywords :
diffraction gratings; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser modes; laser stability; quantum well lasers; reliability; ridge waveguides; waveguide lasers; InGaAs; fifth order surface gratings; high brightness DBR diode laser; monolithic distributed Bragg reflector laser; narrow bandwidth DBR Diode Laser; nonlinear frequency doubling; power 0.4 W; quantum well; reliability test; ridge waveguide diode laser; wavelength 1120 nm; Diode lasers; Distributed Bragg reflectors; Gratings; Laser beams; Power generation; Surface emitting lasers; 1120 nm; Diode laser; high brightness; high spectral radiance; semiconductor laser;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2013.2273614
