Scaling Limits of Rectangular and Trapezoidal Channel FinFETs

Author

Mohseni, J. ; Meindl, J.D.

Author_Institution

Electr. & Comput. Eng. Dept., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2013

fDate

4-5 April 2013

Firstpage

204

Lastpage

210

Abstract

Here we present a complete analytical model that characterizes all the variations of multi-gate MOSFETs including the Tri-gate FinFET (Figure 1), all-around gate FinFET, Trapezoidal FinFET, Double-gate MOSFET, etc. Next we present a complete comparison between ideal rectangular FinFETs and trapezoidal FinFETs. Finally, for the first time, we present the ultimate limit for scaling of rectangular and trapezoidal FinFETs.

Keywords

MOSFET; all-around gate FinFET; double-gate MOSFET; metal oxide semiconductor field effect transistors; multigate MOSFET; rectangular channel FinFET; trapezoidal FinFET; trapezoidal channel FinFET; trigate FinFET; Analytical models; FinFETs; Logic gates; Performance evaluation; Semiconductor device modeling; FINFET; Modeling; Multi-Gate MOSFET; Scaling Limit; Simulation; Trapezoidal FinFET;

fLanguage

English

Publisher

ieee

Conference_Titel

Green Technologies Conference, 2013 IEEE

Conference_Location

Denver, CO

ISSN

2166-546X

Print_ISBN

978-1-4673-5191-1

Type

conf

DOI

10.1109/GreenTech.2013.38

Filename

6520051

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=601450