A physics-based, dynamic electro-thermal model of silicon carbide power IGBT devices

This paper presents an algorithm to model the temperature dependent characteristics of SiC IGBT devices. In this method the electro-thermal behavior of the device is modeled using a numerical model. The proposed electro-thermal model is based on the Kraus IGBT electrical model coupled with the Elmore thermal model, which represents the propagation delay of the heat flux through the physical geometry of each layer. This model is used to evaluate the electro-thermal behavior and heat transfer performance of the device package. The parameters of the model are extracted from the three-dimensional finite element (FE) for computation of the transient thermal impedance. The accuracy of the developed model is verified by comparing the obtained results with those resulting from an analytical simulation and experimental results.