• DocumentCode
    601526
  • Title

    7.5 kV 4H-SiC GTO´s for power conversion

  • Author

    Fursin, Leonid ; Hostetler, John ; Li, Xueqing ; Fox, Matthew ; Alexandrov, Petre ; Hoffmann, Frank ; Holveck, Mark

  • Author_Institution
    United Silicon Carbide, Inc., 7 Deer Park Drive, Suite E, Monmouth Junction, NJ 08852, USA
  • fYear
    2013
  • fDate
    17-21 March 2013
  • Firstpage
    222
  • Lastpage
    225
  • Abstract
    There is a growing demand for medium voltage, 6.5 – 24 kV, switches capable of operating at more than 15 kHz frequencies. The range of potential applications includes grid-tied solar inverters and pulsed-power applications, where the conventional silicon thyristor technology is plagued with slow switching speeds at medium blocking voltage requirements. In this paper we present the design and characterization of 7.5 kV 4H-SiC Gate-Turn-Off thyristors (GTO´s) with multiple floating guard-ring edge termination, and present GTO switching performance at 10 kHz in an AC-link™ [1] inverter.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applied Power Electronics Conference and Exposition (APEC), 2013 Twenty-Eighth Annual IEEE
  • Conference_Location
    Long Beach, CA, USA
  • ISSN
    1048-2334
  • Print_ISBN
    978-1-4673-4354-1
  • Electronic_ISBN
    1048-2334
  • Type

    conf

  • DOI
    10.1109/APEC.2013.6520212
  • Filename
    6520212