DocumentCode
601526
Title
7.5 kV 4H-SiC GTO´s for power conversion
Author
Fursin, Leonid ; Hostetler, John ; Li, Xueqing ; Fox, Matthew ; Alexandrov, Petre ; Hoffmann, Frank ; Holveck, Mark
Author_Institution
United Silicon Carbide, Inc., 7 Deer Park Drive, Suite E, Monmouth Junction, NJ 08852, USA
fYear
2013
fDate
17-21 March 2013
Firstpage
222
Lastpage
225
Abstract
There is a growing demand for medium voltage, 6.5 – 24 kV, switches capable of operating at more than 15 kHz frequencies. The range of potential applications includes grid-tied solar inverters and pulsed-power applications, where the conventional silicon thyristor technology is plagued with slow switching speeds at medium blocking voltage requirements. In this paper we present the design and characterization of 7.5 kV 4H-SiC Gate-Turn-Off thyristors (GTO´s) with multiple floating guard-ring edge termination, and present GTO switching performance at 10 kHz in an AC-link™ [1] inverter.
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition (APEC), 2013 Twenty-Eighth Annual IEEE
Conference_Location
Long Beach, CA, USA
ISSN
1048-2334
Print_ISBN
978-1-4673-4354-1
Electronic_ISBN
1048-2334
Type
conf
DOI
10.1109/APEC.2013.6520212
Filename
6520212
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