Full SiC power module with advanced structure and its solar inverter application

This paper describes advanced power module structure for high power and high frequency application with solar inverter system. This advanced power modules is applied full SiC semiconductor which has SiC MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and SiC SBD (Schottky Barrier Diode). This full SiC power module structure realizes high reliability with low thermal impedance by using these new three technology, i) power circuit board which has copper pins connected to power devices, ii) advanced ceramic insulated substrate that enables high heat dissipation is utilized to reduce thermal impedance and iii) full molded package achieves high temperature operation and high reliability. The power cycling test at high temperature (200deg.C), electrical characteristics and inverter system efficiency of this full SiC power module were evaluated and compared with conventional Si power module. The results showed that the power cycling lifetime has x50 capability, electrical characteristics has low loss and low turn-off surge voltage, and 99.0% of efficiency at solar inverter system.