DocumentCode
601586
Title
A 1200 V, 60 A SiC MOSFET multi-chip phase-leg module for high-temperature, high-frequency applications
Author
Chen, Zheng ; Yao, Yiying ; Boroyevich, Dushan ; Ngo, Khai ; Mattavelli, Paolo ; Rajashekara, Kaushik
Author_Institution
Center for Power Electronics Systems (CPES), The Bradley Dept. of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, 24061, USA
fYear
2013
fDate
17-21 March 2013
Firstpage
608
Lastpage
615
Abstract
This paper presents the design and test results of a 1200 V, 60 A multi-chip phase-leg module based on SiC MOSFETs. The module will be used in a high-frequency (70 kHz) AC-DC converter, and in high-temperature (200 °C) environment, for aircraft applications. Towards this target, the high-temperature characteristics of the SiC MOSFETs are firstly evaluated. The results show the superiority of SiC MOSFETs in both static and switching performances compared to Si devices. Different high-temperature packaging materials are then surveyed and carefully selected for the module to sustain the harsh environment. An improved substrate layout is also proposed based on the “switch pair” concept in order to reduce the parasitic ringing during switching transients. The concept is validated through the comparison with a regular layout design in both stray inductance analysis and time-domain simulation. Finally, the static and switching performances of the fabricated module are presented.
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition (APEC), 2013 Twenty-Eighth Annual IEEE
Conference_Location
Long Beach, CA, USA
ISSN
1048-2334
Print_ISBN
978-1-4673-4354-1
Electronic_ISBN
1048-2334
Type
conf
DOI
10.1109/APEC.2013.6520273
Filename
6520273
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