• DocumentCode
    601586
  • Title

    A 1200 V, 60 A SiC MOSFET multi-chip phase-leg module for high-temperature, high-frequency applications

  • Author

    Chen, Zheng ; Yao, Yiying ; Boroyevich, Dushan ; Ngo, Khai ; Mattavelli, Paolo ; Rajashekara, Kaushik

  • Author_Institution
    Center for Power Electronics Systems (CPES), The Bradley Dept. of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, 24061, USA
  • fYear
    2013
  • fDate
    17-21 March 2013
  • Firstpage
    608
  • Lastpage
    615
  • Abstract
    This paper presents the design and test results of a 1200 V, 60 A multi-chip phase-leg module based on SiC MOSFETs. The module will be used in a high-frequency (70 kHz) AC-DC converter, and in high-temperature (200 °C) environment, for aircraft applications. Towards this target, the high-temperature characteristics of the SiC MOSFETs are firstly evaluated. The results show the superiority of SiC MOSFETs in both static and switching performances compared to Si devices. Different high-temperature packaging materials are then surveyed and carefully selected for the module to sustain the harsh environment. An improved substrate layout is also proposed based on the “switch pair” concept in order to reduce the parasitic ringing during switching transients. The concept is validated through the comparison with a regular layout design in both stray inductance analysis and time-domain simulation. Finally, the static and switching performances of the fabricated module are presented.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applied Power Electronics Conference and Exposition (APEC), 2013 Twenty-Eighth Annual IEEE
  • Conference_Location
    Long Beach, CA, USA
  • ISSN
    1048-2334
  • Print_ISBN
    978-1-4673-4354-1
  • Electronic_ISBN
    1048-2334
  • Type

    conf

  • DOI
    10.1109/APEC.2013.6520273
  • Filename
    6520273