Title :
Third quadrant behavior of SiC MOSFETs
Author :
Callanan, Robert ; Rice, Julius ; Palmour, John
Author_Institution :
Cree, Inc, 4600 Silicon Drive, Durham, NC 27703 USA
Abstract :
This paper presents the third quadrant operating characteristics (VDS and ID both negative) of Cree´s SiC MOSFETs. This work includes information regarding the body diode characteristics, reverse I–V characteristics for various values of positive and negative gate bias, and the need for antiparallel diodes.
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2013 Twenty-Eighth Annual IEEE
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
978-1-4673-4354-1
Electronic_ISBN :
1048-2334
DOI :
10.1109/APEC.2013.6520459
