• DocumentCode
    601680
  • Title

    Third quadrant behavior of SiC MOSFETs

  • Author

    Callanan, Robert ; Rice, Julius ; Palmour, John

  • Author_Institution
    Cree, Inc, 4600 Silicon Drive, Durham, NC 27703 USA
  • fYear
    2013
  • fDate
    17-21 March 2013
  • Firstpage
    1250
  • Lastpage
    1253
  • Abstract
    This paper presents the third quadrant operating characteristics (VDS and ID both negative) of Cree´s SiC MOSFETs. This work includes information regarding the body diode characteristics, reverse I–V characteristics for various values of positive and negative gate bias, and the need for antiparallel diodes.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applied Power Electronics Conference and Exposition (APEC), 2013 Twenty-Eighth Annual IEEE
  • Conference_Location
    Long Beach, CA, USA
  • ISSN
    1048-2334
  • Print_ISBN
    978-1-4673-4354-1
  • Electronic_ISBN
    1048-2334
  • Type

    conf

  • DOI
    10.1109/APEC.2013.6520459
  • Filename
    6520459
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=601680