DocumentCode
601862
Title
Fast IGBT and diode technologies achieve platinum efficiency standard in commercial SMPS applications
Author
Chiola, Davide ; Griebl, Erich ; Husken, Holger
Author_Institution
Infineon Technologies Austria AG, Siemenstrasse 2, 9500 Villach, Austria
fYear
2013
fDate
17-21 March 2013
Firstpage
2461
Lastpage
2465
Abstract
The present paper describes new IGBT and diode silicon technologies. The technology especially targets to reach high efficiency standards in commercial power supply units. After illustrating the electrical characteristics and basic switching behavior of the new devices, the performance in PFC and PWM power stages is discussed. This is done for both, hard-switching and resonant topologies respectively. Advantages and limitations of an IGBT solution in SMPS will finally be highlighted.
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition (APEC), 2013 Twenty-Eighth Annual IEEE
Conference_Location
Long Beach, CA, USA
ISSN
1048-2334
Print_ISBN
978-1-4673-4354-1
Electronic_ISBN
1048-2334
Type
conf
DOI
10.1109/APEC.2013.6520641
Filename
6520641
Link To Document