Title :
Through-silicon via technology for three-dimensional integrated circuit manufacturing
Author :
Civale, Y. ; Redolfi, A. ; Jaenen, Patrick ; Kostermans, M. ; Van Besien, E. ; Mertens, Sofie ; Witters, T. ; Jourdan, Nicolas ; Armini, S. ; El-Mekki, Z. ; Vandersmissen, Kevin ; Philipsen, Harold ; Verdonck, Patrick ; Heylen, Nancy ; Nolmans, P. ; Yunlo
Author_Institution :
imec, Leuven, Belgium
Abstract :
Higher performance, higher operation speed and volume shrinkage require high 3D TSV interconnect densities. This work focuses on a via-middle 3D process flow, which implies processing of the 3D-TSV after the front-end-of-line (FEOL) and before the back-end-of-line (BEOL) interconnect process. A description of the imec 300 mm TSV platform is given, and challenges towards a reliable process integration of high density high aspect-ratio 3D interconnections are also discussed in details.
Keywords :
integrated circuit interconnections; integrated circuit manufacture; integrated circuit reliability; three-dimensional integrated circuits; 3D TSV interconnect density; BEOL; FEOL; back-end-of-line; front-end-of-line; reliability; size 300 mm; three-dimensional integrated circuit manufacturing; through-silicon via technology; via-middle 3D process flow;
Conference_Titel :
Electronic Manufacturing Technology Symposium (IEMT), 2012 35th IEEE/CPMT International
Conference_Location :
Ipoh
Print_ISBN :
978-1-4673-4384-8
Electronic_ISBN :
1089-8190
DOI :
10.1109/IEMT.2012.6521827
