Title :
A 2.4 GHz CMOS Doherty power amplifier with dynamic biasing scheme
Author :
Onizuka, Kohei ; Ikeuchi, Katsushi ; Saigusa, S. ; Otaka, S.
Author_Institution :
Corp. R&D Center, Toshiba Corp., Japan
Abstract :
A watt-level, fully integrated 1:1 Doherty power amplifier with dynamic biasing scheme is demonstrated in 65 nm CMOS. The newly implemented dynamic biasing scheme for sub-PA solves the gain-linearity trade-off of the Doherty PA with enough back-off efficiency improvement, and protects the gate oxide of the sub-PA from over-voltage stress as well. The PA delivers 30.4 dBm of peak output power with maximum 6 points of PAE improvement compared with a class-B PA, and satisfies IEEE 802.11b and 11g spectrum masks at output power levels of 24.3 and 23.2 dBm, respectively, from supply voltage of 3.3 V.
Keywords :
CMOS analogue integrated circuits; UHF power amplifiers; CMOS Doherty power amplifier; Doherty PA; IEEE 802.11b; IEEE 802.11g spectrum masks; dynamic biasing scheme; frequency 2.4 GHz; gain-linearity trade-off; gate oxide; overvoltage stress; size 65 nm; voltage 3.3 V; watt-level fully integrated 1:1 Doherty power amplifier;
Conference_Titel :
Solid State Circuits Conference (A-SSCC), 2012 IEEE Asian
Conference_Location :
Kobe
DOI :
10.1109/IPEC.2012.6522635
