• DocumentCode
    602763
  • Title

    Low-temperature bonding of laser diode chips using atmospheric-pressure plasma activation of flat topped Au stud bumps with smooth surfaces

  • Author

    Yamamoto, Manabu ; Sato, Takao ; Higurashi, Eiji ; Suga, Takashi ; Sawada, Renshi

  • Author_Institution
    Sch. of Eng., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2012
  • fDate
    10-12 Dec. 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Surface activation by atmospheric-pressure plasma has been used for low-temperature bonding of laser diode (LD) chips. Coined Au stud bumps with smooth surfaces (Ra: 1.3 nm) and Au thin film electrodes (Ra: 2.1 nm) of LD chips were activated by Ar+O2 or Ar+H2 atmospheric-pressure plasma for 30 s and bonded in ambient air at low-temperature (25-150°C). Bonding strength was high enough to exceed the strength requirement of MIL-STD-883F, method 2019 (×2). The measured results of light-current-voltage (L-I-V) characteristics of the LD chips indicated no degradation after bonding.
  • Keywords
    bonding processes; gold; semiconductor lasers; Au; MIL-STD-883F; atmospheric-pressure plasma activation; bonding strength; laser diode chips; light-current-voltage characteristics; low-temperature bonding; smooth surfaces; stud bumps; surface activation; temperature 25 C to 150 C; thin film electrodes; time 30 s;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    CPMT Symposium Japan, 2012 2nd IEEE
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-1-4673-2654-4
  • Type

    conf

  • DOI
    10.1109/ICSJ.2012.6523387
  • Filename
    6523387
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=602763