Solid-state bonding using metallic cone layer for interconnection

Author

Ming Li ; Anmin Hu ; Zhuo Chen ; Qin Lu ; Wenjing Zhang ; Suga, Takashi ; YingHui Wang ; Higurashi, Eiji ; Fujino, Masahisa

Author_Institution

Sch. of Mater. Sci. & Eng., Shanghai Jiao Tong Univ., Shanghai, China

fYear

2012

fDate

10-12 Dec. 2012

Firstpage

1

Lastpage

5

Abstract

This paper describes the feasibility of using metallic cone layer in solid-state bonding with Sn-based solder. At temperature below the melting point of Sn, both Ni cones and Cu cones were found successful in forming robust joints with good bonding strength and compact interfaces. This method is also compatible with high-density micro bump interconnecting. Studies have also been carried out in combination with surface activation bonding. Mechanical insertion and controllable interfacial reactions functioning as key factors for realization of the bonding method were emphasized through theoretical study. This bonding method is expected to be potential for the applications in 3D integration.

Keywords

copper; integrated circuit bonding; integrated circuit interconnections; nickel; solders; tin; 3D integration; Cu; Ni; Sn; bonding strength; compact interface; interconnection; interfacial reaction functioning; mechanical insertion; metallic cone layer; microbump interconnecting; solder; solid-state bonding; surface activation bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

CPMT Symposium Japan, 2012 2nd IEEE

Conference_Location

Kyoto

Print_ISBN

978-1-4673-2654-4

Type

conf

DOI

10.1109/ICSJ.2012.6523396

Filename

6523396