Prospects for SiGe thermoelectric generators

Author

Paul, Douglas J. ; Samarelli, Antonio ; Ferre Llin, L. ; Watling, J.R. ; Zhang, Ye ; Weaver, J.M.R. ; Dobson, P.S. ; Cecchi, S. ; Frigerio, Jacopo ; Isa, F. ; Chrastina, D. ; Isella, Giovanni ; Etzelstorfer, T. ; Stangl, J. ; Muller Gubler, E.

Author_Institution

Sch. of Eng., Univ. of Glasgow, Glasgow, UK

fYear

2013

fDate

19-21 March 2013

Firstpage

5

Lastpage

8

Abstract

Thermoelectric materials are one potential technology that could be used for energy harvesting. Here we report results from nanoscale Ge/SiGe heterostructure materials grown on Si substrates designed to enhance the thermoelectric performance at room temperature. The materials and devices are aimed at integrated energy harvesters for autonomous sensing applications.We report Seebeck coefficients up to 279.5 ± 1.2 μV/K at room temperature with electrical conductivities of 77,200 S/m which produce a high power factor of 6.02 ± 0.05 mWm^-1K^-2 and a ZT of 0.135 ± 0.074 at room temperature. Methods for microfabricating modules will be described along with the first demonstration of power output from flip-chip bonded SiGe legs.

Keywords

Ge-Si alloys; Seebeck effect; bonding processes; electric sensing devices; elemental semiconductors; energy harvesting; flip-chip devices; germanium; microfabrication; semiconductor growth; thermoelectric conversion; Ge-SiGe; Seebeck coefficient; Si; autonomous sensing application; electrical conductivity; energy harvesting; flip-chip bonded leg; microfabricating module; nanoscale heterostructure material; temperature 293 K to 298 K; thermoelectric generator; thermoelectric material; Conductivity; Reactive power; Silicon; Thermal sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2013 14th International Conference on

Conference_Location

Coventry

Print_ISBN

978-1-4673-4800-3

Electronic_ISBN

978-1-4673-4801-0

Type

conf

DOI

10.1109/ULIS.2013.6523478

Filename

6523478