SiGe on SOI nanowire array TFETs with homo- and heterostructure tunnel junctions

This paper presents experimental results on tunneling field-effect transistors (TFETs) based on SiGe on SOI nanowire arrays. A SiGe-Si heterostructure TFET with a vertical tunneling junction consisting of an in situ doped SiGe source and a Si channel is demonstrated. The device shows switching behavior over a drain current range of up to 8 orders of magnitude with a minimum slope of 90 mV/dec. A larger tunneling area results in an increase of on-current. The heterojunction TFET shows great improvement compared to a homojunction SiGe on SOI nanowire design with implanted junctions. Temperature dependent measurements and device simulations are performed in order to analyze the tunnel transport mechanism in the devices.