• DocumentCode
    602806
  • Title

    Heterogeneous micro/nano-electronics: Towards the maturity learning into the zero variability era

  • Author

    Deleonibus, Simon

  • Author_Institution
    LETI, CEA, Grenoble, France
  • fYear
    2013
  • fDate
    19-21 March 2013
  • Firstpage
    33
  • Lastpage
    36
  • Abstract
    Nanoelectronics will have to face major challenges in the next decades in order to proceed with increasing progress and drastically reduced to zero variability at the sub 10 nm nodes level. New progress laws combined to the scaling down of CMOS based technology will emerge to enable new paths to Functional Diversification. New materials and disruptive architectures, mixing logic and memories, Heterogeneous Integration, introducing 3D schemes at the Front End and Back End levels, will come into play to make it possible.
  • Keywords
    CMOS logic circuits; CMOS memory circuits; nanoelectronics; scaling circuits; three-dimensional integrated circuits; 3D scheme; CMOS based technology; back end level; disruptive architecture; front end level; functional diversification; heterogeneous integration; heterogeneous micronanoelectronics; material architecture; maturity learning; memory circuit; mixing logic circuit; size 10 nm; zero variability era; CMOS integrated circuits; Indexes; Logic gates; MOS devices; MOSFET circuits; Metals; Silicon; 3D; CMOSFETs; Carbon; FDSOI; FinFET; Germanium; Heterogeneous integration; Multigates; Nanowires; Silicon; Silicon on insulator technology; Strain; System on Wafer; Wafer bonding; Zero Variability; sequential integration; strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultimate Integration on Silicon (ULIS), 2013 14th International Conference on
  • Conference_Location
    Coventry
  • Print_ISBN
    978-1-4673-4800-3
  • Electronic_ISBN
    978-1-4673-4801-0
  • Type

    conf

  • DOI
    10.1109/ULIS.2013.6523484
  • Filename
    6523484