DocumentCode
602806
Title
Heterogeneous micro/nano-electronics: Towards the maturity learning into the zero variability era
Author
Deleonibus, Simon
Author_Institution
LETI, CEA, Grenoble, France
fYear
2013
fDate
19-21 March 2013
Firstpage
33
Lastpage
36
Abstract
Nanoelectronics will have to face major challenges in the next decades in order to proceed with increasing progress and drastically reduced to zero variability at the sub 10 nm nodes level. New progress laws combined to the scaling down of CMOS based technology will emerge to enable new paths to Functional Diversification. New materials and disruptive architectures, mixing logic and memories, Heterogeneous Integration, introducing 3D schemes at the Front End and Back End levels, will come into play to make it possible.
Keywords
CMOS logic circuits; CMOS memory circuits; nanoelectronics; scaling circuits; three-dimensional integrated circuits; 3D scheme; CMOS based technology; back end level; disruptive architecture; front end level; functional diversification; heterogeneous integration; heterogeneous micronanoelectronics; material architecture; maturity learning; memory circuit; mixing logic circuit; size 10 nm; zero variability era; CMOS integrated circuits; Indexes; Logic gates; MOS devices; MOSFET circuits; Metals; Silicon; 3D; CMOSFETs; Carbon; FDSOI; FinFET; Germanium; Heterogeneous integration; Multigates; Nanowires; Silicon; Silicon on insulator technology; Strain; System on Wafer; Wafer bonding; Zero Variability; sequential integration; strain;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultimate Integration on Silicon (ULIS), 2013 14th International Conference on
Conference_Location
Coventry
Print_ISBN
978-1-4673-4800-3
Electronic_ISBN
978-1-4673-4801-0
Type
conf
DOI
10.1109/ULIS.2013.6523484
Filename
6523484
Link To Document