Title :
Parameters extraction in SiGe/Si pMOSFETs using split CV technique
Author :
Soussou, A. ; Leroux, Camille ; Rideau, D. ; Toffoli, A. ; Romano, Gianmarco ; Tavernier, C. ; Reimbold, Gilles ; Ghibaudo, Gerard
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
A new parameter extraction technique based on split CV is proposed for bulk MOSFETs. To this end, Poisson-Schrodinger simulations are compared to the measured split CV, confirming the validity of the extraction methods. The new methods have been successfully applied to Si and Si0.7Ge0.3/Si pMOS enabling the investigation of the Ge incorporation impact.
Keywords :
Ge-Si alloys; MOSFET; Schrodinger equation; elemental semiconductors; silicon; stochastic processes; Poisson-Schrodinger simulation; Si; Si0.7Ge0.3-Si; pMOSFET; parameter extraction technique; split CV measurement technique; Doping; MOSFET circuits; Silicon; Silicon germanium; Simulation; Poisson-Schrodinger simulations; Si pMOSFET; Si0.7Ge0.3/Si pMOSFET; SiGe impact; parameter extraction; split CV;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2013 14th International Conference on
Conference_Location :
Coventry
Print_ISBN :
978-1-4673-4800-3
Electronic_ISBN :
978-1-4673-4801-0
DOI :
10.1109/ULIS.2013.6523486
