• DocumentCode
    602808
  • Title

    Parameters extraction in SiGe/Si pMOSFETs using split CV technique

  • Author

    Soussou, A. ; Leroux, Camille ; Rideau, D. ; Toffoli, A. ; Romano, Gianmarco ; Tavernier, C. ; Reimbold, Gilles ; Ghibaudo, Gerard

  • Author_Institution
    STMicroelectron., Crolles, France
  • fYear
    2013
  • fDate
    19-21 March 2013
  • Firstpage
    41
  • Lastpage
    44
  • Abstract
    A new parameter extraction technique based on split CV is proposed for bulk MOSFETs. To this end, Poisson-Schrodinger simulations are compared to the measured split CV, confirming the validity of the extraction methods. The new methods have been successfully applied to Si and Si0.7Ge0.3/Si pMOS enabling the investigation of the Ge incorporation impact.
  • Keywords
    Ge-Si alloys; MOSFET; Schrodinger equation; elemental semiconductors; silicon; stochastic processes; Poisson-Schrodinger simulation; Si; Si0.7Ge0.3-Si; pMOSFET; parameter extraction technique; split CV measurement technique; Doping; MOSFET circuits; Silicon; Silicon germanium; Simulation; Poisson-Schrodinger simulations; Si pMOSFET; Si0.7Ge0.3/Si pMOSFET; SiGe impact; parameter extraction; split CV;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultimate Integration on Silicon (ULIS), 2013 14th International Conference on
  • Conference_Location
    Coventry
  • Print_ISBN
    978-1-4673-4800-3
  • Electronic_ISBN
    978-1-4673-4801-0
  • Type

    conf

  • DOI
    10.1109/ULIS.2013.6523486
  • Filename
    6523486
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=602808