Title :
Strain transfer structure as a mobility booster for fully-depleted SOI MOSFETs at the 10nm node
Author :
Morvan, Sylvain ; Andrieu, F. ; Barbe, J.-C. ; Ghibaudo, Gerard
Author_Institution :
LETI, CEA, Grenoble, France
Abstract :
This paper presents mechanical simulations results of an innovative strain transfer structure. The strain induced by the edge relaxation of a buried SiGe layer is compared to strained SOI (sSOI) wafers for Fully Depleted Silicon-On-Insulator. We studied the influence of different dimensions including the active area and demonstrate a transfer of a tensile stress up to 1.3GPa in the Silicon, corresponding about 80% electron mobility enhancement for logic transistors at the 10nm node.
Keywords :
Ge-Si alloys; MOSFET; electron mobility; silicon-on-insulator; SiGe; buried layer; edge relaxation; electron mobility enhancement; fully-depleted SOI MOSFET; innovative strain transfer structure; logic transistors; mechanical simulations; mobility booster; sSOI wafers; size 10 nm; strained silicon-on-insulator; Additives; Optical films; Silicon; Silicon germanium;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2013 14th International Conference on
Conference_Location :
Coventry
Print_ISBN :
978-1-4673-4800-3
Electronic_ISBN :
978-1-4673-4801-0
DOI :
10.1109/ULIS.2013.6523490
