High-k dielectric FinFETs towards sensing integrated circuits

Author

Rigante, S. ; Scarbolo, P. ; Bouvet, D. ; Wipf, M. ; Tarasov, A. ; Bedner, K. ; Ionescu, A.M.

Author_Institution

Nanoelectronic Devices Lab., Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland

fYear

2013

fDate

19-21 March 2013

Firstpage

73

Lastpage

76

Abstract

This work presents a well-defined electronic device, namely a n-channel high-k dielectric FinFET (Fin Field Effect Transistor) as new label-free sensor for enhanced sensing integrated circuits. Metal gate FinFETs on bulk Si have been successfully electrically characterized, showing excellent SS (Subthreshold Slope) and high I_on/I_off ratio. Exposed n-channel FinFETs, integrated on the same die, have been demonstrated pH sensitive with high current variation per pH unit. Herein, we also describe the fabrication process, assisted by FEA (Finite Element Analysis) simulations, and the HfO₂ characterization.

Keywords

MOSFET; elemental semiconductors; finite element analysis; high-k dielectric thin films; integrated circuits; sensors; silicon; FEA simulations; HfO₂; SS; Si; electronic device; fabrication process; finite element analysis simulations; label-free sensor; metal gate fin field effect transistor; n-channel high-k dielectric FinFET; pH unit; sensing integrated circuits enhancement; subthreshold slope; Dielectric measurement; Dielectrics; Finite element analysis; Hafnium compounds; Sensors; FinFET; bulk Si; high-k dielectric; label-free sensor; local SOI; microfluidic platform; pH sensing;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2013 14th International Conference on

Conference_Location

Coventry

Print_ISBN

978-1-4673-4800-3

Electronic_ISBN

978-1-4673-4801-0

Type

conf

DOI

10.1109/ULIS.2013.6523494

Filename

6523494