Analytical drain current model using temperature dependence model in nanoscale Double-Gate (DG) MOSFETs

In this paper we include the effect of temperature dependence in our compact model for Double Gate (DG) MOSFETs using advanced transport models, and we show that the model has a good degree of agreement with the 2D numerical simulation obtained using Multisubband Monte Carlo simulation. The core model is based on a compact charge control model for charge quantization. A template device representative for a downscaled symmetric double-gate MOSFET was used to validate the model.