• DocumentCode
    602832
  • Title

    Thermally grown GeO2 on epitaxial Ge on Si(001) substrate

  • Author

    Casteleiro, C. ; Halpin, J.E. ; Shah, V.A. ; Myronov, M. ; Leadley, D.R.

  • Author_Institution
    Dept. of Phys., Univ. of Warwick, Coventry, UK
  • fYear
    2013
  • fDate
    19-21 March 2013
  • Firstpage
    169
  • Lastpage
    172
  • Abstract
    We show good quality (GeO2) layer grown on epitaxial germanium on a Si substrate. The oxidation was done at two temperatures, 450°C and 475°C. The oxidation at 475°C was done for 30min and 60min. It was found that the layers growth at 475°C show higher quality.
  • Keywords
    epitaxial growth; epitaxial layers; germanium compounds; oxidation; passivation; transmission electron microscopy; Ge; GeO2; Si; TEM; epilayers; epitaxial Ge substrate; epitaxial Si(001) substrate; epitaxial germanium substrate; oxidation; surface passivation; temperature 450 degC; temperature 475 degC; time 30 min; time 60 min; Annealing; Epitaxial growth; Hafnium; Lead; Logic gates; Performance evaluation; Silicon; Germanium oxide; Oxidation; Surface passivation; Thermal growth;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultimate Integration on Silicon (ULIS), 2013 14th International Conference on
  • Conference_Location
    Coventry
  • Print_ISBN
    978-1-4673-4800-3
  • Electronic_ISBN
    978-1-4673-4801-0
  • Type

    conf

  • DOI
    10.1109/ULIS.2013.6523510
  • Filename
    6523510
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=602832