Qualitative and quantitative differences between non-crystalline and nano-crystalline oxides in device technologies

Author

Lucovsky, Gerry ; Jinwoo Kim

Author_Institution

Dept. of Phys., North Carolina State Univ., Raleigh, NC, USA

fYear

2013

fDate

19-21 March 2013

Firstpage

173

Lastpage

176

Abstract

This paper presents (i) spectroscopic studies of intrinsic vacated O-site defects in non-crystallin(nc-) SiO₂, GeO₂ and nano-crystalline HfO2 and TiO2, and (ii) proof of concept spectroscopic studies. These indicate electronic structure that favors nc-SiO2 and GeO2 for gate stacks in CMOS devices that push the ultimate limits of thickness scaling reductions, and interfacial engineering. The properties of elemental and multi-constituent TM oxides are determined by a qualitatively and quantitaively different band edge and vacated O-atom site structure that makes them viable candidates for memory and switching devices.

Keywords

CMOS integrated circuits; electronic structure; germanium compounds; hafnium compounds; nanostructured materials; silicon compounds; titanium compounds; CMOS devices; Ge; HfO₂; SiO₂; TiO₂; band edge; concept spectroscopic study; electronic structure; gate stacks; interfacial engineering; intrinsic vacated O-site defects; memory devices; nanocrystalline oxides; noncrystalline oxides; switching devices; thickness scaling reductions; vacated O-atom site structure; Atomic measurements; CMOS integrated circuits; Hafnium compounds; Logic gates; HfO2; Magneli phase alloys; TiO2; TiO2-HfO2 alloys; X-ray absorption and photo emission spectroscopies; ligand feild splitting; memory and switching devices; n-c SiO2; nc-GeO2; remote plasma processing;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2013 14th International Conference on

Conference_Location

Coventry

Print_ISBN

978-1-4673-4800-3

Electronic_ISBN

978-1-4673-4801-0

Type

conf

DOI

10.1109/ULIS.2013.6523511

Filename

6523511