Mechanical resonators on CMOS for integrated passive band pass filters

Author

Kazmi, S.N.R. ; Salm, C. ; Schmitz, Jurriaan

Author_Institution

MESA+ Inst. for Nanotechnol., Univ. of Twente, Enschede, Netherlands

fYear

2013

fDate

19-21 March 2013

Firstpage

193

Lastpage

196

Abstract

We present CMOS post-processing compatible resonator structures for passive band-pass filtering in the MHz-few GHz range. This article discusses the considerations leading to the choice of materials and process sequence, practical aspects in the fabrication, and resonator performance. Using in-situ boron-doped polycrystalline germanium-silicon as resonator and electrode material, high quality factors over 200,000 are obtained at relatively low motional impedance.

Keywords

CMOS integrated circuits; band-pass filters; boron; electrochemical electrodes; germanium compounds; passive filters; resonator filters; CMOS post-processing; GeSi:B; boron-doped polycrystalline germanium-silicon; electrode material; integrated passive band pass filter; mechanical resonator structure; motional impedance; quality factor; CMOS integrated circuits; Geology; Imaging; Lithography; Resistance; Resonant frequency; CMOS; GeSi; Lamé mode; MEMS; SiGe; above-IC; filter; germanium; microtechnology; resonator; silicon; software defined radio;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2013 14th International Conference on

Conference_Location

Coventry

Print_ISBN

978-1-4673-4800-3

Electronic_ISBN

978-1-4673-4801-0

Type

conf

DOI

10.1109/ULIS.2013.6523517

Filename

6523517