Simulation methodology for 2D random network of CNTs field-effect transistors

Two-dimensional (2D) random networks of carbon nanotubes (RN-CNTs) were simulated with respect to various geometry factors and compared with experimental results. To determine the effective current-conducting pathway(s) in such complex RN-CNTs, we developed a methodology to find the optimal percolation paths with account for the conduction length (l_d) of each CNT segment involved, for properties of the junction between CNTs and for series resistance (R_sd) at contacts. Moreover, to investigate linear and non-linear operation of RN-CNT FETs, SPICE circuit simulation was employed.