Title :
Hole-phonon energy loss rate in boron doped silicon
Author :
Richardson-Bullock, J.S. ; Prest, M.J. ; Prunnila, Mika ; Gunnarsson, David ; Shah, V.A. ; Dobbie, A. ; Myronov, M. ; Morris, R.J.H. ; Whall, T.E. ; Parker, E.H.C. ; Leadley, D.R.
Author_Institution :
Dept. of Phys., Univ. of Warwick, Coventry, UK
Abstract :
The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate in the same material over an identical temperature range.
Keywords :
Hall mobility; boron; electron-phonon interactions; elemental semiconductors; energy loss of particles; silicon; Hall mobility; Si:B; boron doped silicon; electron-phonon energy loss rate; hole-phonon energy loss rate; temperature 300 mK to 700 mK; Charge carrier processes; Heating; Insulators; Monitoring; Silicon;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2013 14th International Conference on
Conference_Location :
Coventry
Print_ISBN :
978-1-4673-4800-3
Electronic_ISBN :
978-1-4673-4801-0
DOI :
10.1109/ULIS.2013.6523522
