• DocumentCode
    602844
  • Title

    Hole-phonon energy loss rate in boron doped silicon

  • Author

    Richardson-Bullock, J.S. ; Prest, M.J. ; Prunnila, Mika ; Gunnarsson, David ; Shah, V.A. ; Dobbie, A. ; Myronov, M. ; Morris, R.J.H. ; Whall, T.E. ; Parker, E.H.C. ; Leadley, D.R.

  • Author_Institution
    Dept. of Phys., Univ. of Warwick, Coventry, UK
  • fYear
    2013
  • fDate
    19-21 March 2013
  • Firstpage
    213
  • Lastpage
    215
  • Abstract
    The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate in the same material over an identical temperature range.
  • Keywords
    Hall mobility; boron; electron-phonon interactions; elemental semiconductors; energy loss of particles; silicon; Hall mobility; Si:B; boron doped silicon; electron-phonon energy loss rate; hole-phonon energy loss rate; temperature 300 mK to 700 mK; Charge carrier processes; Heating; Insulators; Monitoring; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultimate Integration on Silicon (ULIS), 2013 14th International Conference on
  • Conference_Location
    Coventry
  • Print_ISBN
    978-1-4673-4800-3
  • Electronic_ISBN
    978-1-4673-4801-0
  • Type

    conf

  • DOI
    10.1109/ULIS.2013.6523522
  • Filename
    6523522
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=602844