Non-parabolicity in Si-(110) nMOSFETs: Analytic and numerical results for the two-band k · p model

Author

Donetti, L. ; Gamiz, Francisco ; Biel, B. ; Sampedro, C.

Author_Institution

Dept. de Electron., Univ. de Granada, Granada, Spain

fYear

2013

fDate

19-21 March 2013

Firstpage

109

Lastpage

112

Abstract

The two-band k · p Hamiltonian for silicon conduction valleys is able to model the strong non-parabolic bandstructure behavior necessary to reproduce the experimental mobility of (110) nMOSFETs. In this paper we derive analytic results for (110) square wells showing how confinement affects the energy and the effective masses of the electron subbands. Moreover, a numerical implementation coupled to Poisson´s equations allows us to study realistic device structures of bulk and SOI MOSFETs. The results show that non-parabolicity produces sizeable effects on electron band-structure especially when confinement is strong.

Keywords

MOSFET; Poisson equation; elemental semiconductors; numerical analysis; silicon; silicon-on-insulator; Poisson equation; SOI; Si; electron subband; nMOSFET; nonparabolic band-structure behavior; nonparabolicity; numerical implementation; silicon conduction valley; square well analysis; two-band kp Hamiltonian model; Logic gates; MOSFET;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2013 14th International Conference on

Conference_Location

Coventry

Print_ISBN

978-1-4673-4800-3

Electronic_ISBN

978-1-4673-4801-0

Type

conf

DOI

10.1109/ULIS.2013.6523523

Filename

6523523