Title :
Non-parabolicity in Si-(110) nMOSFETs: Analytic and numerical results for the two-band k · p model
Author :
Donetti, L. ; Gamiz, Francisco ; Biel, B. ; Sampedro, C.
Author_Institution :
Dept. de Electron., Univ. de Granada, Granada, Spain
Abstract :
The two-band k · p Hamiltonian for silicon conduction valleys is able to model the strong non-parabolic bandstructure behavior necessary to reproduce the experimental mobility of (110) nMOSFETs. In this paper we derive analytic results for (110) square wells showing how confinement affects the energy and the effective masses of the electron subbands. Moreover, a numerical implementation coupled to Poisson´s equations allows us to study realistic device structures of bulk and SOI MOSFETs. The results show that non-parabolicity produces sizeable effects on electron band-structure especially when confinement is strong.
Keywords :
MOSFET; Poisson equation; elemental semiconductors; numerical analysis; silicon; silicon-on-insulator; Poisson equation; SOI; Si; electron subband; nMOSFET; nonparabolic band-structure behavior; nonparabolicity; numerical implementation; silicon conduction valley; square well analysis; two-band kp Hamiltonian model; Logic gates; MOSFET;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2013 14th International Conference on
Conference_Location :
Coventry
Print_ISBN :
978-1-4673-4800-3
Electronic_ISBN :
978-1-4673-4801-0
DOI :
10.1109/ULIS.2013.6523523
