Title :
Nano-scale order in hydrogenated amorphous silicon a-Si,H and doped a-Si(H) Defect reduction for device applications
Author_Institution :
Dept. of Phys., North Carolina State Univ., Raleigh, NC, USA
Abstract :
Up until recently (i) c-Si and poly-crystalline Si (poly-Si have been assumed to be qualitatively different than (ii) a-Si(H). X-ray absorption and photo-emission studies combined with ab-initio many-electron theory for their interpretation have established that they are indeed much similar. In point of fact, a-Si(H) should be renamed nano-grain (ng)-Si, since some of the more important properties, e.g., doping and forming p-n junctions are a consequence of the nano-grain character.
Keywords :
X-ray absorption spectra; X-ray photoelectron spectra; ab initio calculations; elemental semiconductors; hydrogen; nanostructured materials; semiconductor thin films; silicon; RPECVD; Si:H; X-ray absorption spectroscopy; X-ray photoemission spectroscopy; ab-initio many-electron theory; doping; hydrogenated amorphous silicon; nanograin; nanoscale order; p-n junctions; thin films; Annealing; Artificial neural networks; Bonding; Doping; Electron traps; Silicon; X-ray absorption and photo emission spectroscopies; amorpous Si; crystaline Si; medium and long range order; nano-grain Si; non-crsytalline SiO2; short;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2013 14th International Conference on
Conference_Location :
Coventry
Print_ISBN :
978-1-4673-4800-3
Electronic_ISBN :
978-1-4673-4801-0
DOI :
10.1109/ULIS.2013.6523524
