Title :
Pure Ge quantum well with high hole mobility
Author :
Hassan, A.H.A. ; Mironov, O.A. ; Feher, A. ; Cizmar, E. ; Gabani, S. ; Morris, R.J.H. ; Dobbie, A. ; Shah, V.A. ; Myronov, M. ; Berkutov, I.B. ; Andrievskii, V.V. ; Leadley, D.R.
Author_Institution :
Dept. of Phys., Univ. of Warwick, Coventry, UK
Abstract :
We present magneto-transport properties of the two dimensional hole gas (2DHG) in fully strained Ge quantum wells grown on Si0.2Ge0.8/Si (100) substrates. Comparison is made between heterostructures that are modulation doped in both normal and inverted configurations. Using Shubnikov de Haas oscillations at temperatures down to 90 mK (inverted structure) and to 1.5K (normal structure), an extremely high hole mobility (0.51-1.34) × 106 cm2/Vs has been observed, along with the lowest value of effective mass (0.063-0.070) m0 to date. The 2DHG is confirmed to be in a pure Ge channel, with low background impurity scattering that improves the 2DHG transport.
Keywords :
Shubnikov-de Haas effect; chemical vapour deposition; elemental semiconductors; germanium; hole mobility; oscillations; semiconductor growth; semiconductor quantum wells; two-dimensional hole gas; 2DHG transport; Ge; Shubnikov de Haas oscillations; Si0.2Ge0.8-Si; Si0.2Ge0.8-Si (100) substrates; effective mass; heterostructures; hole mobility; impurity scattering; magneto-transport properties; quantum well; two dimensional hole gas; Lead; Scattering; Silicon germanium; 2DHG; Ge quantum well; Ge/SiGe; hole mobility;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2013 14th International Conference on
Conference_Location :
Coventry
Print_ISBN :
978-1-4673-4800-3
Electronic_ISBN :
978-1-4673-4801-0
DOI :
10.1109/ULIS.2013.6523527
