Detailled characterisation of SOI n-FinFETs at very low temperature

Author

Achour, H. ; Cretu, B. ; Routoure, J. ; Carin, R. ; Talmat, R. ; Benfdila, A. ; Simoen, Eddy ; Claeys, Cor

Author_Institution

Univ. of Caen Basse-Normandie, Caen, France

fYear

2013

fDate

19-21 March 2013

Firstpage

125

Lastpage

128

Abstract

DC and low frequency noise measurements on strained and unstrained n-channel FinFET transistors processed on silicon on insulator (SOI) substrates were performed at 10 K in order to evaluate the device performances and study the low frequency noise mechanisms. The main electrical parameters are investigated and compared to those found at room temperature. The low frequency noise analysis shows that at 10 K, the carrier number fluctuations dominate the flicker noise in weak inversion, while the access resistance noise contributions prevails in strong inversion.

Keywords

MOSFET; electric current measurement; electric noise measurement; flicker noise; frequency measurement; semiconductor device measurement; silicon-on-insulator; DC measurement; SOl n-FinFET; access resistance noise contribution; carrier number fluctuation; electrical parameter; flicker noise; low frequency noise analysis; low frequency noise measurement; silicon on insulator substrate; strained n-channel FinFET transistor; temperature 10 K; temperature 293 K to 298 K; unstrained n-channel FinFET transistor; weak inversion; CMOS integrated circuits; Logic gates; Performance evaluation; DC performances; FinFET; low frequency noise; very low temperature operation;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2013 14th International Conference on

Conference_Location

Coventry

Print_ISBN

978-1-4673-4800-3

Electronic_ISBN

978-1-4673-4801-0

Type

conf

DOI

10.1109/ULIS.2013.6523529

Filename

6523529