Title :
Energy-efficient Spin-Transfer Torque RAM cache exploiting additional all-zero-data flags
Author :
Jinwook Jung ; Nakata, Y. ; Yoshimoto, Masahiko ; Kawaguchi, Hitoshi
Author_Institution :
Grad. Sch. of Syst. Inf., Kobe Univ., Kobe, Japan
Abstract :
Large on-chip caches account for a considerable fraction of the total energy consumption in modern microprocessors. In this context, emerging Spin-Transfer Torque RAM (STT-RAM) has been regarded as a promising candidate to replace large on-chip SRAM caches in virtue of its nature of the zero leakage. However, large energy requirement of STT-RAM on write operations, resulting in a huge amount of dynamic energy consumption, precludes it from application to on-chip cache designs. In order to reduce the write energy of the STT-RAM cache thereby the total energy consumption, this paper provides an architectural technique which exploits the fact that many applications process a large number of zero data. The proposed design appends additional flags in cache tag arrays and set these additional bits if the corresponding data in the cache line is the zero-valued data in which all data bits are zero. Our experimental results show that the proposed cache design can reduce 73.78% and 69.30% of the dynamic energy on write operations at the byte and word granularities, respectively; total energy consumption reduced by 36.18% and 42.51%, respectively. In addition to the energy reduction, performance evaluation results indicate that the proposed cache improves the processor performance by 5.44% on average.
Keywords :
MRAM devices; SRAM chips; cache storage; integrated circuit design; STT-RAM; all-zero-data flags; architectural technique; cache line; cache tag arrays; dynamic energy consumption; energy-efficient spin-transfer torque RAM cache; large on-chip SRAM caches; microprocessors; on-chip cache designs; zero-valued data; Arrays; Energy consumption; Magnetic tunneling; Magnetization; Random access memory; System-on-chip; Transistors; Cache; Emerging devices; Energy consumption; Spin-Transfer Torque RAM; Zero-valued data;
Conference_Titel :
Quality Electronic Design (ISQED), 2013 14th International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4673-4951-2
DOI :
10.1109/ISQED.2013.6523613