DocumentCode
602913
Title
Effectiveness of hybrid recovery techniques on parametric failures
Author
Ganapathy, Shrikanth ; Canal, Ramon ; Gonzalez, Adriana ; Rubio, Albert
Author_Institution
Dept. d´Arquitectura de Computadors, Univ. Politec. de Catalunya, Barcelona, Spain
fYear
2013
fDate
4-6 March 2013
Firstpage
258
Lastpage
264
Abstract
Modern day microprocessors effectively utilise supply voltage scaling for tremendous power reduction. The minimum voltage beyond which a processor cannot operate reliably is defined as V ddmin. On-chip memories like caches are the most susceptible to voltage-noise induced failures because of process variations and reduced noise-margins thereby arbitrating whole processor´s V ddmin. In this paper, we evaluate the effectiveness of a new class of hybrid techniques in improving cache yield through failure prevention and correction. Proactive read/write assist techniques like body-biasing (BB) and wordline boosting (WLB) when combined with reactive techniques like ECC and redundancy are shown to offer better quality-energy-area trade offs when compared to their standalone configurations. Proactive techniques can help lower V ddmin (improving functional margin) for significant power savings and reactive techniques ensure that the resulting large number of failures are corrected (improving functional yield). Our results in 22nm technology indicate that at scaled supply voltages, hybrid techniques can improve parametric yield by atleast 28% when considering worst-case process variations.
Keywords
cache storage; failure analysis; integrated circuit reliability; BB; ECC; WLB; body-biasing; caches; failure correction; failure prevention; hybrid recovery techniques; microprocessors; on-chip memory; parametric failures; power reduction; power savings; proactive read-write assist techniques; process variations; quality-energy-area trade-offs; reactive techniques; reduced noise-margins; size 22 nm; supply voltage scaling; voltage-noise induced failures; wordline boosting; Boosting; Hafnium; Probability; Redundancy; SRAM cells; Threshold voltage; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Quality Electronic Design (ISQED), 2013 14th International Symposium on
Conference_Location
Santa Clara, CA
ISSN
1948-3287
Print_ISBN
978-1-4673-4951-2
Type
conf
DOI
10.1109/ISQED.2013.6523620
Filename
6523620
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