DocumentCode :
602918
Title :
Cost-driven 3D design optimization with metal layer reduction technique
Author :
Qiaosha Zou ; Jing Xie ; Yuan Xie
Author_Institution :
Pennsylvania State Univ., University Park, PA, USA
fYear :
2013
fDate :
4-6 March 2013
Firstpage :
294
Lastpage :
299
Abstract :
Three-dimensional integrated circuit (3D IC) is a promising solution to continue the performance scaling. However, the fabrication cost for 3D ICs can be a major concern for the adoption of this emerging technology. In this paper, we study the cost implication for both TSV-based and interposer-based 3D ICs, with the observation that many long metal interconnects in 2D designs are replaced by TSVs in 3D designs, and therefore the number of metal layers to satisfy routing requirements can be reduced, resulting in cost saving in 3D ICs. Based on our cost model, we propose a cost-driven 3D design space optimization flow that balances the design area and metal layer requirement, by optimizing the cost tradeoffs between silicon area and the number of metal layers. With the cost-driven design optimization flow, we can achieve cost saving up to 19% for TSV-based 3D designs, and 26% for interposer-based 3D designs, respectively, compared to the baseline designs.
Keywords :
circuit optimisation; elemental semiconductors; integrated circuit design; integrated circuit interconnections; network routing; silicon; three-dimensional integrated circuits; 2D design; Si; TSV-based 3D IC design; cost model; cost saving; cost tradeoff; cost-driven 3D design space optimization flow; fabrication cost; interposer-based 3D IC; long metal interconnects; metal layer reduction technique; performance scaling; routing requirement; three-dimensional integrated circuit; Bonding; Logic gates; Metals; Routing; Stacking; Three-dimensional displays; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design (ISQED), 2013 14th International Symposium on
Conference_Location :
Santa Clara, CA
ISSN :
1948-3287
Print_ISBN :
978-1-4673-4951-2
Type :
conf
DOI :
10.1109/ISQED.2013.6523625
Filename :
6523625
Link To Document :
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