• DocumentCode
    602945
  • Title

    Effect-cause intra-cell diagnosis at transistor level

  • Author

    Zhenzhou Sun ; Bosio, A. ; Dilillo, L. ; Girard, P. ; Todri, A. ; Virazel, A. ; Auvray, E.

  • Author_Institution
    LIRMM, Univ. of Montpellier, Montpellier, France
  • fYear
    2013
  • fDate
    4-6 March 2013
  • Firstpage
    460
  • Lastpage
    467
  • Abstract
    Logic diagnosis is the process of isolating possible sources of observed errors in a defective circuit, so that physical failure analysis can be performed to determine the root cause of such errors. Thus, effective and accurate logic diagnosis is crucial to speed up physical failure analysis process and eventually to improve the yield. In this paper, we propose a new intra-cell diagnosis method based on the “Effect-Cause” approach to improve the defect localization accuracy. The proposed approach is based on the Critical Path Tracing here applied at transistor level. It leads to a precise localization of the root cause of observed errors. Experimental results show the efficiency of our approach.
  • Keywords
    failure analysis; fault diagnosis; integrated circuit reliability; integrated circuit testing; critical path tracing; defect localization accuracy; defective circuit; effect-cause approach; effect-cause intra-cell diagnosis; logic diagnosis; physical failure analysis process; transistor level; Circuit faults; Dictionaries; Failure analysis; Integrated circuit modeling; Logic gates; Tin; Transistors; Effect-Cause Approach; Failure Analysis; Intra-Cell Diagnosis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality Electronic Design (ISQED), 2013 14th International Symposium on
  • Conference_Location
    Santa Clara, CA
  • ISSN
    1948-3287
  • Print_ISBN
    978-1-4673-4951-2
  • Type

    conf

  • DOI
    10.1109/ISQED.2013.6523652
  • Filename
    6523652