DocumentCode :
602945
Title :
Effect-cause intra-cell diagnosis at transistor level
Author :
Zhenzhou Sun ; Bosio, A. ; Dilillo, L. ; Girard, P. ; Todri, A. ; Virazel, A. ; Auvray, E.
Author_Institution :
LIRMM, Univ. of Montpellier, Montpellier, France
fYear :
2013
fDate :
4-6 March 2013
Firstpage :
460
Lastpage :
467
Abstract :
Logic diagnosis is the process of isolating possible sources of observed errors in a defective circuit, so that physical failure analysis can be performed to determine the root cause of such errors. Thus, effective and accurate logic diagnosis is crucial to speed up physical failure analysis process and eventually to improve the yield. In this paper, we propose a new intra-cell diagnosis method based on the “Effect-Cause” approach to improve the defect localization accuracy. The proposed approach is based on the Critical Path Tracing here applied at transistor level. It leads to a precise localization of the root cause of observed errors. Experimental results show the efficiency of our approach.
Keywords :
failure analysis; fault diagnosis; integrated circuit reliability; integrated circuit testing; critical path tracing; defect localization accuracy; defective circuit; effect-cause approach; effect-cause intra-cell diagnosis; logic diagnosis; physical failure analysis process; transistor level; Circuit faults; Dictionaries; Failure analysis; Integrated circuit modeling; Logic gates; Tin; Transistors; Effect-Cause Approach; Failure Analysis; Intra-Cell Diagnosis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design (ISQED), 2013 14th International Symposium on
Conference_Location :
Santa Clara, CA
ISSN :
1948-3287
Print_ISBN :
978-1-4673-4951-2
Type :
conf
DOI :
10.1109/ISQED.2013.6523652
Filename :
6523652
Link To Document :
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