DocumentCode :
602981
Title :
A CMOS high dimming ratio power-LED driver with a preloading inductor current method
Author :
Yoon, K.S. ; Keon Lee
Author_Institution :
Dept. of Electron. Eng., Inha Univ., Incheon, South Korea
fYear :
2013
fDate :
4-6 March 2013
Firstpage :
709
Lastpage :
713
Abstract :
This paper presents a high dimming ratio LED driver for automotive lighting applications which require avoiding EMI radiation. In order to accomplish a high dimming ratio LED driver, the preloading inductor current methodology is proposed for the power stage of the proposed circuit to achieve the fast transient response time during the LED load switching. The proposed circuit receives the input voltage of 12V and generates the output voltage of 30V with the load current of 350mA. The chip is implemented with 0.35um BCDMOS process, and the die area is 2.35 × 2.35 mm2. Measurement results illustrate that the proposed LED drive system features the minimum rising time as small as 240ns and the corresponding dimming ratio becomes 2000:1 at the dimming frequency of 1KHz. The maximum power conversion efficiency of the chip is measured to be 94.82%.
Keywords :
BiCMOS integrated circuits; LED lamps; automotive electronics; driver circuits; inductors; power integrated circuits; transient response; BCDMOS process; CMOS high dimming ratio power-LED driver; EMI radiation avoidance; LED load switching; automotive lighting applications; current 350 mA; fast transient response time; load current; maximum power conversion efficiency; minimum rising time; preloading inductor current method; voltage 12 V; voltage 30 V; Automotive engineering; Current measurement; Inductors; Light emitting diodes; Lighting; Synchronization; Vehicles; Automotive lighting; LED driver; Power-LED; dimming ratio; integtated circuit;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design (ISQED), 2013 14th International Symposium on
Conference_Location :
Santa Clara, CA
ISSN :
1948-3287
Print_ISBN :
978-1-4673-4951-2
Type :
conf
DOI :
10.1109/ISQED.2013.6523688
Filename :
6523688
Link To Document :
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