Fast Recovery Power Epitaxial Diode

Several diode designs to satisfy specific needs of quick response and power, this paper examines the arguments of a design that is economical in terms of manufacturing process but to improve the requirements of the few devices on the market with these characteristics (reverse breakdown voltage of 600V and reverse recovery time of 35ns). The design is tested using finite elements-through simulation and compared the results with commercial diodes by similar characteristics. The designed structure was p + nn +, with an epitaxial layer 50 mm thick and doped structure 2 × 10¹⁴ cm^-3, which are obtained breakdown voltages of more than 600V and fast reverse recovery of less than 35 ns. A breakdown voltage of more than 600 V and reverse recovery times less than 35 ns were obtained for a p + nn + structure, with an epilayer of 50 μm thickness and doping of 2 to 3 × 10¹⁴ cm^-3.